1

Transistor

2SC4755

Silicon NPN epitaxial planer type

For high speed switching

q

High-speed switching.

q

q

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Emitter

EIAJ:SC–70

3:Collector

S–Mini Type Package

2.1

±0.1

1.25

±0.1

0.425

0.425

1

3

2

0.2

±0.1

Symbol

Ratings

25

20

5

300

200

150

150

–55 ~ +150

Unit

V

V

V

mA

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

Turn-off time

Storage time

Symbol

*

Conditions

Refer to the measurment circuit

min

40

200

typ

0.17

0.76

500

2

17

15

7

max

0.1

0.1

200

0.25

1.0

4

Unit

µA

µA

V

V

MHz

pF

ns

ns

ns

Marking symbol :

DV

Rank

P

Q

R

40 ~ 80

60 ~ 120

90 ~ 200

Marking Symbol

DVP

DVQ

DVR