C3015 datasheet(1/2 Pages) IMP

Part #	C3015

Description	CMOS 3um Digital

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	IMP [IMP, Inc]

Direct Link	http://www.ds-imp.com.cn/index.asp

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1 / 2 page

89

Process C3015

CMOS 3

µm

Digital

Electrical Characteristics

T=25oC Unless otherwise noted

ISO 9001 Registered

®

N-Channel Transistor

Symbol

Minimum

Typical

Maximum

Unit

Comments

Threshold Voltage

VTN

0.6

0.8

1.0

V

100x3

µm

Body Factor

γ

N

0.6

V1/2

100x3

µm

Conduction Factor

βN

42

47

52

µA/V2

100x100

µm

Effective Channel Length

LeffN

2.85

3.2

3.55

µm

100x3

µm

Width Encroachment

∆WN

0.7

µm

Per side

Punch Through Voltage

BVDSSN

12

V

Poly Field Threshold Voltage

VTFP(N)

12

V

P-Channel Transistor

Symbol

Minimum

Typical

Maximum

Unit

Comments

Threshold Voltage

VTP

–0.6

–0.8

–1.0

V

100x3

µm

Body Factor

γ

P

0.55

V1/2

100x3

µm

Conduction Factor

βP

13

15

19

µA/V2

100x100

µm

Effective Channel Length

LeffP

2.85

3.2

3.55

µm

100x3

µm

Width Encroachment

∆WP

0.9

µm

Per side

Punch Through Voltage

BVDSSP

–12

V

Poly Field Threshold Voltage

VTFP(P)

–12

V

Diffusion & Thin Films

Symbol

Minimum

Typical

Maximum

Unit

Comments

Well (field) Sheet Resistance

ρ

P-well(f)

3.2

4.8

6.5

K

Ω/

P-well

N+ Sheet Resistance

ρ

N+

16

21

27

Ω/

N+ Junction Depth

xjN+

0.8

µm

P+ Sheet Resistance

ρ

P+

50

80

100

Ω/

P+ Junction Depth

xjP+

0.7

µm

Gate Oxide Thickness

TGOX

37.5

40.0

42.5

nm

Gate Poly Sheet Resistance

ρ

POLY1

15

22

30

Ω/

Metal-1 Sheet Resistance

ρ

M1

30

60

m

Ω/

Passivation Thickness

TPASS

200+900

nm

oxide+nit.

Capacitance

Symbol

Minimum

Typical

Maximum

Unit

Comments

Gate Oxide

COX

0.66

0.72

0.78

fF/

µm2

Metal-1 to Poly-1

CM1P

0.0523

fF/

µm2

Metal-1 to Silicon

CM1S

0.026

0.030

0.034

fF/

µm2

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