1

Transistor

2SC5026

Silicon NPN epitaxial planer type

For low-frequency output amplification

Complementary to 2SA1890

q

q

q

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ:SC–62

3:Emitter

Mini Power Type Package

4.5

±0.1

3.0

±0.15

1.5

±0.1

0.4

±0.08

0.5

±0.08

1.5

±0.1

0.4

±0.04

1.6

±0.2

45

°

marking

321

Symbol

*

Ratings

80

80

5

1.5

1

1

150

–55 ~ +150

Unit

V

V

V

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

*1

Conditions

*2

*2

*2

min

80

80

5

120

60

typ

0.15

0.85

120

10

max

0.1

340

0.3

1.2

20

Unit

µA

V

V

V

V

V

MHz

pF

thickness of 1.7mm for the collector portion

Rank

R

S

120 ~ 240

170 ~ 340

Marking symbol :

2A