HM741 datasheet(2/4 Pages) HMSEMI

Part #	HM741

Description	N-Channel Enhancement Mode MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

Direct Link	http://www.hmsemi.com/

Logo

2 / 4 page

Key Electrical Characteristics (TO-220 package)

Parameter

Description

Min

Typ

Max

Test condition

BVDSS, V

Drain-to-Source

Breakdown Voltage

200

VGS =0 V, ID =250 μA

ID, A

Continuous Drain

Current

Tj = 25 °C

RDS(on), Ohm

Static Drain-to-Source

On Resistance

0,35

0,4

VGS=10 V, ID=4,5 A

VGS(th), V

Gate Threshold Voltage

2,0

4,0

VDS = VGS, ID =250 μA

IDSS, μA

Drain-to-Source

Leakage Current

1,0

VDS = 200 V, VGS= 0 V

IGSS, nA

Gate-to-Source Leakage

Current

±100

VGS= ± 25 V, VDS = 0 V

Tj, TSTG, °C

Operating Junction and

Storage Temperature

Range

- 55 ~ +150

* Drain current limited by junction temperature

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

HM630

200VDS／±25VGS／9A(ID) N-Channel Enha ncement Mode MOSFET

Page

HM741 Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM741 Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Html Pages

1 2 3 4

Datasheet Download

Link URL