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Description：

This N-Chanel and P-Channel MOSFET use advanced trench technology

to form a level shifted high side switch, and for a host of other application.

Features：

N-Channel:

P-Channel:

1) High Power and current handing capability.

2) Lead free product is acquired.

3) Surface Mount Package.

Symbol

Parameter

N-Channel

P-Channel

Units

Drain-Source Voltage

40

-40

V

Gate-Source Voltage

±20

±20

V

Drain Current-Continuous

8

-7

A

Drain Current-Continuous@ Current-Pulsed

1

40

-30

Power Dissipation

2

2

W

Operating and Storage Junction Temperature Range

-55 to +150

-55 to +150

℃

Thermal Characteristics：

Channel

Symbol

Parameter

Max

Units

N

Thermal Resistance,Junction to Ambient

62.5

℃/W

P

Thermal Resistance,Junction to Ambient

62.5

G2

D1

D1

D2

D2

S1

G1

S2

www.doingter.cn

2

2

19

35

SPC4527