1

Transistor

2SC5190

Silicon NPN epitaxial planer type

For low-voltage high-frequency amplification

q

q

q

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Emitter

EIAJ:SC–70

3:Collector

S–Mini Type Package

2.1

±0.1

1.25

±0.1

0.425

0.425

1

3

2

0.2

±0.1

Symbol

Ratings

9

6

2

30

150

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector output capacitance

Transition frequency

Foward transfer gain

Noise figure

Symbol

2

NF

Conditions

min

40

typ

100

0.4

10

6.5

1.7

max

1

1

160

0.7

Unit

µA

µA

pF

GHz

dB

dB

Marking symbol :

3Y