Transistors

1

2SC5295

Silicon NPN epitaxial planer type

For 2 GHz band low-noise amplification

I Features

• High transition frequency f

T

• Low collector output capacitance C

ob

• SS-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing.

I Absolute Maximum Ratings T

1: Base

2: Emitter

3: Collector

EIAJ: SC-75

SS-Mini Type Package (3-pin)

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

15

V

Collector to emitter voltage

10

V

Emitter to base voltage

2V

Collector current

65

mA

Collector power dissipation

125

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

5

°

(0.5)

(0.5)

0.15

+0.1

–0.05

0.2

+0.1

–0.05

1

2

3

Marking Symbol: 3S

I Electrical Characteristics T

Rank

Q

R

S

50 to 120

100 to 170

150 to 300

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

= 10 V, I

E

= 01

µA

Emitter cutoff current

= 1 V, I

C

= 01

µA

50

300

Transition frequency

= 8 V, I

C

= 15 mA, f = 1.5 GHz

7.0

8.5

GHz

Collector output capacitance

= 10 V, I

E

= 0, f = 1 MHz

0.6

1.0

pF

Forward transfer gain

| S

2

7

9

dB

Power gain

GUM

= 8 V, I

C

= 15 mA, f = 1.5 GHz

10

dB

Noise figure

NF

= 8 V, I

C

= 7 mA, f = 1.5 GHz

2.2

3.0

dB

Note) *: Rank classification