HM2006 datasheet(3/5 Pages) HMSEMI

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January 21, 2015

Version 1.1

Symbol

Definition

TYP.

MAX.

Units

tonH

High side turn-on propagation delay

220

250

toffH

High side turn-off propagation delay

120

tonL

Low side turn-on propagation delay

100

120

toffL

Low side turn-off propagation delay

110

Delay matching

120

150

Turn-on rise time

Turn-off fall time

Absolute Maximum Ratings

[Note1]

Symbol

Definition

MIN.

MAX.

Units

High side floating supply

-0.3

130

High side floating supply return

VB – 22

VB + 0.3

VHO

High side gate drive output

VS -0.3

VB + 0.3

VCC

Low side and main power supply

-0.3

VLO

Low side gate drive output

-0.3

VCC + 0.3

VIN

Logic input of HIN & LIN

-0.3

VCC + 0.3

HBM Model

2.5

ESD

Machine Model

200

Package Power Dissipation @ TA

8 Lead SOIC

0.625

RthJA

Thermal Resistance Junction to

8 Lead SOIC

200

°C /W

Junction Temperature

150

Storage

-55

150

Lead Temperature (Soldering, 10 seconds)

300

°C

Note 1:

Exceeding these ratings may damage the device.

Recommended Operating Conditions

Symbol

Definition

MIN.

MAX.

Units

High side floating supply

VS +10

VS +20

High side floating supply return

120

VHO

High side gate drive output voltage

VCC

Low side supply

VLO

Low side gate drive output voltage

VCC

VIN

Logic input voltage(HIN & LIN)

VCC

Ambient temperature

-40

125

℃

Dynamic Electrical Characteristics

VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.

HM2006

HM2006 Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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