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HM2907 Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM2907 Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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2 / 4 page ![]() Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA 80 V IDSS Zero Gate Voltage Drain Current VDS=64V,VGS=0V 1 uA TJ=85°C 30 VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2 2.6 4 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA RDS(on) Drain-Source On-Resistance VGS=10V, ID=40A 3 4.5 mΩ VSD Diode Forward Voltage ISD=30A,VGS=0V 1.3 V RG Gate Resistance VGS=0V, VDS=0V, Frequency=1MHz 2.3 Ω Note: 1: Pulse test ; pulse width ≦ 300ns, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. Page 2 Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com / / |
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