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US3A Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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US3A Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page  US3A~US3M Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junctions ● Ultrafast reverse recovery time ● Low switching losses, high efficiency ● High forward surge capability ● High temperature soldering： 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Major Ratings and Characteristics Mechanical Date ● Case: JEDEC DO-214AB molded plastic body over glass passivated chip ● Terminals: Solder plated, solderable per JESD22-B102D ● Polarity: Laser band denotes cathode end trr 50 nS , 75 nS VF 1.0 V , 1.3 V , 1.7 V Tj max. 150 °C IF(AV) 3.0 A VRRM 50 V to 1000 V IFSM 100 A y Maximum Ratings & Thermal Characteristics (TA = 25 °C unless otherwise noted) Note 1: Mounted on P.C.B. with 0.32 x 0.32” (8.0 x 8.0mm) copper pad areas. Electrical Characteristics (TA = 25 °C unless otherwise noted) Note 2: Pulse test:300μs pulse width,1% duty cycle. Maximum average forward rectified current IF(AV) 3.0 A Operating junction and storage temperature range TJ ,TSTG –55 to +150 ℃ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Thermal resistance from junction to lead (1) RθJL 20 ℃/ W V 50 100 200 400 Maximum repetitive peak reverse voltage VRRM 50 100 Items Symbol US3A US3B US3D US3G Maximum DC blocking voltage VDC 600 Maximum RMS voltage VRMS 35 70 140 280 600 j Symbol US3A~US3D US3G US3J~US3M US3J US3K US3M UNIT 420 560 700 V 200 400 800 1000 V 800 1000 Reverse current VR=VDC Tj=25℃ IR 5 μA Tj=125℃ 50 UNIT Instantaneous forward voltage IF=3.0 A (2) VF 1.0 1.3 1.7 V Items Test conditions Typical junction capacitance 4.0 V ,1MHz CJ 30 pF Reverse recovery time IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A trr 50 75 nS High Efficiency Recovery rectifiers Rev : www.leiditech.com 01.06.2015 1/3 |
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