2SC5393 datasheet(1/2 Pages) PANASONIC

Part #	2SC5393

Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

2SC5393

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Wide area of safe operation (ASO)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

600

400

7

10

5

1

40

2

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Storage time

Fall time

Symbol

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

tstg

tf

Conditions

VCB = 600V, IE = 0

VEB = 5V, IC = 0

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 1.5A

IC = 1.5A, IB = 0.3A

VCE = 10V, IC = 0.1A, f = 0.5MHz

IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,

VCC = 150V

min

10

8

typ

30

max

100

60

1

2

2.0

0.3

Unit

µA

V

MHz

µs

TC=25°C

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

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2SC5393 Datasheet(PDF) 1 Page - Panasonic Semiconductor

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