RB886CS

Diodes

1/2

Schottky barrier diode

RB886CS

Applications

External dimensions (Unit : mm)

Land size figure (Unit : mm)

High frequency detection

VMN2

0.55

Features

1) Ultra small mold type. (VMN2)

2) Low Ct and high detection efficiency.

Construction

Structure

Silicon epitaxial planar

Taping specifications (Unit : mm)

Absolute maximum ratings (Ta=25

°C)

Electrical characteristics (Ta=25

°C)

ROHM : VMN2

dot (year week factory) + day

0.16±0.05

0.37±0.03

0.6±0.05

0.35±0.1

0.156

0.7±0.05

4.0±0.1

2±0.05

φ0.5

4±0.1

2±0.05

φ1.55

0.2±0.05

0.52

Symbol

Unit

V

mA

Tj

℃

Tstg

℃

Parameter

Reverse voltage

verage rectified forward current

-40 to +125

Limits

5.0

10

nction temperature

torage temperature

125

A

Ju

S

Symbol

Min.

Typ.

Max.

Unit

-

-

0.35

V

-

-

120

µA

Capacitance between terminals

Ct

-

0.53

0.80

pF

Conditions

everse current

Parameter

ward voltage

For

R