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STP6N65M2 Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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STP6N65M2 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 4 page ![]() www.doingter.cn — 3 — Trr Reverse Recovery Time --- 320 --- NS Qrr Reverse Recovery Charge --- 2.4 --- IS= A,VGS=0V diF/d t=100A/ μs 3 Typical Characteristics μC 7 Notes : 1, L=6mH, IAS=7A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature STP6N65M2 |
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