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STP45NF06 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # STP45NF06
Description  N-Channel MOSFET uses advanced trench technology
PDF  3 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STP45NF06 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=70A
---
18
22
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
1050
1365
pF
Coss
Output Capacitance
---
460
600
Crss
Reverse Transfer Capacitance
---
70
90
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=30V, ID=25A,
RGEN=25Ω.
---
20
50
ns
tr
Rise Time
---
100
210
ns
td(off)
Turn-Off Delay Time
---
80
170
ns
tf
Fall Time
---
85
180
ns
Qg
Total Gate Charge
VGS=10V, VDS=48V,ID=50A
---
32
42
nC
STP45NF06



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