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STP656F Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # STP656F
Description  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STP656F Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±25V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=25A
---
---
0.018
Ω
GFS
Forward Transconductance
---
---
---
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
1180
1540
pF
Coss
Output Capacitance
---
440
580
Crss
Reverse Transfer Capacitance
---
65
90
Switching Characteristics
td(on)
Turn-On Delay Time
3,4
VDD=250V, ID=25A,
RGEN=25Ω
---
15
40
ns
tr
Rise Time
3,4
---
105
220
ns
td(off)
Turn-Off Delay Time
3,4
---
60
130
ns
tf
Fall Time
3,4
---
65
140
ns
Qg
Total Gate Charge
3,4
VGS=10V, VDS=400V,
ID=25A
---
31
41
nC
Qgs
Gate-Source
Charge
3,4
---
8
---
nC
Qgd
Gate-Drain “Miller” Charge
3,4
---
13
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,ID=25A
---
---
1.5
V
STP656F



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