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SSFD6035 Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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SSFD6035 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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3 / 7 page ![]() TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance VDS - Drain-to-Source Voltage (V) 3 V 0 10 20 30 40 50 60 70 80 0 1234 5 VGS = 10 thru 4 V 0 20 40 60 80 100 0 102030 405060 VGS - Gate-to-Source Voltage (V) TC = - 55 °C 25 °C 125 °C 0 500 1000 1500 2000 2500 3000 3500 4000 0 102030 405060 VDS - Drain-to-Source Voltage (V) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) 25 ° C - 55 °C TC = 125 ° C 0.000 0.0 20 0.0 30 0.0 40 0.0 50 0.0 60 0 1020 3040 5060 7080 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) VDS = 30 V ID = 40 A E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSFD6035 3 |
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