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HM5451 Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM5451 Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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3 / 11 page ![]() ______________________________________ ____________________________________________________ __________________________ _ Operating Ambient Temperature -40 to 85 °C Maximum Junction Temperature 125 °C Storage Temperature -55 to 150 °C Lead Temperature ( Soldering, 10 sec) 300 °C Power Dissipation at T=25°C 0.4 W Package Thermal Resistance (Junction to Ambient) θJA 250 °C /W Package Thermal Resistance (Junction to Case) θJC 130 °C /W ESD 2000 V ELECTRICAL CHARACTERISTICS Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Detection Voltage Overcharge Detection Voltage VCU 4.25 4.30 4.35 V Overcharge Release Voltage VCL 4.05 4.10 4.15 V Overdischarge Detection Voltage VDL 2.7 2.8 2.9 V Overdischarge Release Voltage VDR 2.9 3.0 3.1 V Charger Detection Voltage *VCHA -0.06 V Detection Current Overdischarge Current1 Detection IIOV1 VDD=3.6V 0.4 0.9 1.5 A Load Short-Circuiting Detection *ISHORT VDD=3.5V 10 20 30 A Current Consumption Current Consumption in Normal Operation IOPE VDD=3.5V VM =0V 1.5 2 μ A Current Consumption in power Down IPDN VDD=2.0V VM pin floating 0.1 μ A VM Internal Resistance Internal Resistance between VM and VDD *RVMD VDD=3.5V VM=1.0V 320 k Ω Internal Resistance between VM and GND *RVMS VDD=2.0V VM=1.0V 100 k Ω FET on Resistance 30 Equivalent FET on Resistance *RSS(ON) VDD=3.6V IVM =1.0A 40 45 55 m Ω Over Temperature Protection 120 - - ______________________________________ _____________________________________________ _____________________ ___________ _ |
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