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IRF7331 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7331 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 7.0 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.5 A IDM Pulsed Drain Current 28 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 7/17/01 Absolute Maximum Ratings W www.irf.com 1 IRF7331 HEXFET® Power MOSFET PD - 94225 VDSS RDS(on) max (mΩ) Ω) Ω) Ω) Ω) ID 20V 30@VGS = 4.5V 7.0A 45@VGS = 2.5V 5.6A SO-8 These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Description l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel D1 D1 D2 D2 G1 S2 G2 S1 T op V iew 8 1 2 3 4 5 6 7 Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 62.5 °C/W Thermal Resistance |
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