Transistors

1

2SC5654

Silicon NPN epitaxial planer type

For DC-DC converter

Complementary to 2SA2028

I Features

• Low collector to emitter saturation voltage V

CE(sat)

• S-mini type package, allowing downsizing and thinning of the

equipment and automatic insertion through the tape packing

I Absolute Maximum Ratings T

a

= 25°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

20

V

Collector to emitter voltage

20

V

Emitter to base voltage

5V

Peak collector current

1A

Collector current

3A

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector to base voltage

= 10 µA, I

E

= 020

V

Collector to emitter voltage

= 1 mA, I

B

= 020

V

Emitter to base voltage

V

Forward current transfer ratio

= 2 V, I

C

= 100 mA

160

560

Collector to emitter saturation voltage

= 200 mA, I

B

= 10 mA

60

100

mV

Collector output capacitance

12

30

pF

Transition frequency

−10 mA, f = 200 MHz

180

MHz

I Electrical Characteristics T

a

= 25°C ± 3°C

Marking Symbol: 2S

1: Base

2: Emitter

3: Collector

S Mini Type Package (3-pin)

0.3

+0.1

–0.0

1

3

2

(0.65) (0.65)

0.15

+0.10

–0.05

10˚