1

Transistor

2SC829

Silicon NPN epitaxial planer type

For high-frequency amplification

q

Optimum for RF amplification, oscillation, mixing, and IF stage

of FM/AM radios.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

1.27

2.54

±0.15

2

13

Symbol

Ratings

30

20

5

30

400

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Transition frequency

Common emitter reverse transfer capacitance

Reverse transfer impedance

Symbol

*

Conditions

min

30

20

5

70

150

typ

230

1.3

max

250

1.6

60

Unit

V

V

V

MHz

pF

Ω

Rank

B

C

70 ~ 160

110 ~ 250