STD790AT4 datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

• Thermal Resistance Junction-Case

Max

8.33

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -30 V

Tj = 100

-0.1

-10

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -4 V

-1

µA

V(BR)CER

∗ Collector-Emitter

Breakdown Voltage

(RBE = 47

Ω)

IC = -10 mA

-60

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -100

µA

-60

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -100

µA

-5

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -0.5A

IB = -5mA

IC = -1A

IB = -10mA

IC = -2A

IB = -20mA

IC = -3A

IB = -30mA

IC = -3A

IB = -30mA Tj = 100

o C

-0.15

-0.3

-0.5

-0.7

-0.9

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -1 A

IB = -10 mA

-0.8

-1.0

VBE(on)

Base-Emitter Turn-On

Voltage

IC = -1 A

VCE = -2 V

-0.8

-1

hFE

∗

DC Current Gain

IC = -10 mA

VCE = -2 V

IC = -500 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

IC = -2 A

VCE = -1 V

IC = -3 A

VCE = -1V

100

200

160

130

300

Transition Frequency

IC = -50 mA

VCE = -5V f = 50MHz

100

MHz

RESISTIVE LOAD

Delay Time

RiseTime

StorageTime

Fall Time

IC = -3 A

IB1 = - IB2 = -60 mA

VCC = -20 V

(see figure 1)

180

160

250

220

210

300

100

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

STD790A

2/6

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