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SWK4614 Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # SWK4614
Description  N-Channel and P-Channel MOSFET useadvanced trench Technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWK4614 Datasheet(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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P-Channel Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ON/Off States
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=-250μA
-40
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-40V
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-1
-1.6
-2.5
V
RDS(ON)
Drain-Source On Resistance
2
VGS=-10V,ID=-4A
---
32
40
mΩ
GFS
Forward Transconductance
VDS=-10V, ID=-3A
---
5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-15V, VGS=0V, f=1MHz
---
1050
1600
pF
Coss
Output Capacitance
---
110
160
Crss
Reverse Transfer Capacitance
---
80
120
Switching Characteristics
td(on)
Turn-On Delay Time
2.3
VDS=-20V,V GS=-4.5V,
RGEN=25Ω. ID=-1A
---
20
40
ns
tr
Rise Time
2.3
---
12
24
ns
td(off)
Turn-Off Delay Time
2.3
---
46
80
ns
tf
Fall Time
2.3
---
6
12
ns
Qg
Total Gate Charge
2.3
VGS=-4.5V, VDS=-20V,
ID=-2A
---
8
16
nC
Qgs
Gate-Source
Charge
2.3
---
2.1
4.2
nC
Qgd
Gate-Drain “Miller” Charge
2.3
---
3.6
7.2
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=-1A
---
--
-1
V
LS
---
-7.2
A
LSM
---
-14.4
A
Continuous Source Current
Pulsed Source Current
VG=VD=0V , Force Current
Notes:
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
www.doingter.cn
SWK4614



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