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FTK8N80F Datasheet(PDF) 3 Page - First Silicon Co., Ltd

Part # FTK8N80F
Description  8.0 Amps, 800 Volts N-Channel MOS -FET
PDF  8 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK8N80F Datasheet(HTML) 3 Page - First Silicon Co., Ltd

  FTK8N80F Datasheet HTML 1Page - First Silicon Co., Ltd FTK8N80F Datasheet HTML 2Page - First Silicon Co., Ltd FTK8N80F Datasheet HTML 3Page - First Silicon Co., Ltd FTK8N80F Datasheet HTML 4Page - First Silicon Co., Ltd FTK8N80F Datasheet HTML 5Page - First Silicon Co., Ltd FTK8N80F Datasheet HTML 6Page - First Silicon Co., Ltd FTK8N80F Datasheet HTML 7Page - First Silicon Co., Ltd FTK8N80F Datasheet HTML 8Page - First Silicon Co., Ltd  
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2012. 07. 05
3/8
FTK8N80P/F/DD
Revision No : 0
ELECTRICAL CHARACTERISTICS
VSD
VGS = 0 V, IS = 7.0 A
1.4
V
IS
6.6
A
ISM
26
A
tRR
650
ns
QRR
VGS = 0 V, IS = 7.0A,
dIF/dt =100 A/µs (Note 4)
7.0
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, I AS = 6.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
Reverse Recovery Time
Reverse Recovery Charge
MAX
(TJ = 25˚C , unless Otherwise specified.)



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