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FTK12N65PD Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK12N65PD
Description  12 Amps, 650 Volts N-CHANNEL MOSFET
PDF  7 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK12N65PD Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
650
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
12
A
TC = 25°C
12
A
Continuous Drain Current
TC = 100°C
ID
6.5
Pulsed Drain Current (Note 1)
IDM
48
A
Single Pulse(Note 2)
EAS
790
mJ
Avalanche Energy
Repetitive Limited by TJ(MAX)
EAR
24
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TC = 25°C
225 / 51
W
Power Dissipation (TO-220,TO-263/ TO-220F)
Derate above 25°C
PD
1.25 / 0.38
W / ˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
UNIT
62.5
Junction-to-Ambient
θJA
0.56
Junction-to-Case
TO-220, TO-263
θJc
˚C / W
ELECTRICAL CHARACTERISTICS (TC = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
650
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
10
µ
A
Drain-Source Leakage Current
IDSS
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSSF
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250
µ
A, Referenced to
25°C
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 6.0A
0.8
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1480
pF
Output Capacitance
COSS
200
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
25
pF
2012. 07. 03
2/7
Revision No : 0
Junction Temperature
TJ
+150
˚C
TSTG
-55 ~ +150
˚C
MAX
Operating and Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD =350V , ID = 12A
, RG = 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
115
ns
Turn-Off Fall Time
tF
85
ns
Total Gate Charge
QG
42
nC
Gate-Source Charge
QGS
VDS = 520V,ID =
VGS = 10V
(Note 4,5)
8.6
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
21
nC
tD(OFF)
MIN
TYP
MAX
Forward Transconductance
gFS
VDS = 40V, ID = 6.0A (Note 4)
8.7
S
IGSSR
30
95
ns
TO-220F
2.43
θJc
12A
FTK12N65P/F/DD



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