GSD2004W datasheet(2/3 Pages) VISHAY

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GSD2004W

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 23-Feb-18

Document Number: 85729

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches): SOD-123

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse breakdown voltage

IR = 100 μA

V(BR)

300

Leakage current

VR = 240 V

100

VR = 240 V, Tj = 150 °C

100

μA

Forward voltage

IF = 100 mA

IF = 20 mA

0.83

0.87

Diode capacitance

VF = VR = 0, f = 1 MHz

5pF

Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100 

trr

2.85 (0.112)

2.55 (0.100)

3.85 (0.152)

3.55 (0.140)

Mounting Pad Layout

2.5 (0.098)

0.85 (0.033)

Cathode bar

0.45 (0.018)

0.25 (0.010)

0.5 (0.020) ref.

Rev. 4 - Date: 24. Sep. 2009

Document no.: S8-V-3910.01-001 (4)

17432

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