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UI0014 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UI0014
Description  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UI0014 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=100V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
2.4
V
Dynamic Characteristics
Ciss
Input Capacitance
VDS= V, VGS=0V, f=1MHz
---
500
pF
Coss
Output Capacitance
---
Crss
Reverse Transfer Capacitance
---
Switching Characteristics
td(on)
Turn-On Delay Time
---
12.4
ns
tr
Rise Time
---
12
ns
td(off)
Turn-Off Delay Time
---
27.3
ns
tf
Fall Time
---
2.6
ns
Qg
Total Gate Charge
VGS=10V, VDS=30V,
ID=3A
---
16.8
nC
Qgs
Gate-Source
Charge
---
5
nC
Qgd
Gate-Drain “Miller” Charge
---
4
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=10A
---
---
1.2
V
VDD=30V, RL=15Ω
VGS=10V,RG=2.5Ω
---
---
50
30
25
---
---
---
---
---
---
---
---
---
---
≦
300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.
Notes: Pulse test: pulse width
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=8A
---
120
mΩ
VGS=4.5V,ID=4A
---
150
---
---
UI0014



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