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UT4016 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UT4016
Description  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT4016 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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2 —
Electrical Characteristics：(T
C=25℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
45
---
V
IDSS
Zero Ga te Voltage Drain Current
VGS=0V, VDS=40V
---
---
1
μA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1.2
1.8
2.5
V
RDS(ON)
Dra i n-Source On Resistance
2
VGS=10V,ID=20A
---
5.3
6.5
mΩ
VGS=4.5V,ID=A
---
---
---
GFS
Forwa rd Tra nsconductance
VDS=10V, ID=20A
15
---
---
S
Dynamic Characteristics
Ciss
Input Ca pacitance
VDS=20V, VGS=0V, f=1MHz
---
4010
---
pF
Coss
Output Ca pacitance
---
750
---
Crss
Reverse Tra nsfer Ca pacitance
---
390
---
Switching Characteristics
td(on)
Turn-On Delay Ti me
VDD=20V, RL=1Ω
RGEN=3Ω.VGS=10V
---
11
---
ns
tr
Ri s e Time
---
10
---
ns
td(off)
Turn-Off Delay Ti me
---
38
---
ns
tf
Fa ll Ti me
---
11
---
ns
Qg
Tota l Gate Charge
VGS=10V, VDS=20V,
ID=20A
---
50
---
nC
Qgs
Ga te-Source Cha rge
---
12
---
nC
Qgd
Ga te-Drain “Miller” Charge
---
13
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=10A
---
---
-1.2
V
UT4016



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