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D1275 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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D1275 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 2 page ![]() 2 Power Transistors 2SD1275, 2SD1275A PC —Ta IC —VCE IC —VBE VCE(sat) —IC hFE —IC Cob —VCB Area of safe operation (ASO) Rth(t) —t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (P C=2W) (1) (2) (3) (4) Ambient temperature Ta (˚C) 06 5 4 13 2 0 5 4 3 2 1 T C=25˚C I B=2.0mA 0.2mA 0.4mA 0.6mA 0.8mA 1.0mA 1.2mA 1.4mA 1.6mA 1.8mA Collector to emitter voltage V CE (V) 03.2 0.8 2.4 1.6 0 10 8 6 4 2 V CE=4V T C=100˚C –25˚C 25˚C Base to emitter voltage V BE (V) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 I C/IB=250 100˚C 25˚C T C=–25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 10 102 103 104 105 V CE=4V 25˚C –25˚C T C=100˚C Collector current I C (A) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 I E=0 f=1MHz T C=25˚C Collector to base voltage V CB (V) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 Non repetitive pulse T C=25˚C I CP I C t=10ms DC 1ms Collector to emitter voltage V CE (V) 10–4 10 10–3 10–1 10–2 1103 102 104 10–2 10–1 1 10 103 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) Time t (s) |
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