GD30MPS06J datasheet(2/7 Pages) GENESIC

Part #	GD30MPS06J

Description	650V 30A SiC Schottky MPS??Diode

PDF	7 Pages

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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GD30MPS06J

650V 30A SiC Schottky MPS™ Diode

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

Note

Min.

Typ.

Max.

Diode Forward Voltage

I = 30 A, T = 25°C

1.5

1.8

Fig. 1

I = 30 A, T = 175°C

1.8

Reverse Current

V = 650 V, T = 25°C

µA

Fig. 2

V = 650 V, T = 175°C

Total Capacitive Charge

I ≤ I

dI /dt = 200 A/µs

V = 200 V

Fig. 7

V = 400 V

Switching Time

V = 200 V

< 10

V = 400 V

Total Capacitance

V = 1 V, f = 1MHz

735

Fig. 6

V = 400 V, f = 1MHz

Thermal/Package Characteristics

Parameter

Symbol

Conditions

Values

Unit

Note

Min.

Typ.

Max.

Thermal Resistance, Junction - Case

0.58

°C/W

Fig. 9

Weight

1.45

F,MAX

thJC

Jul. 20 Rev 1

www.genesicsemi.com/sic-schottky-mps/GD30MPS06J/GD30MPS06J.pdf

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