EPC2015C datasheet(3/6 Pages) EPC-CO

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eGaN® FET DATASHEET

EPC2015C

| 3

All measurements were done with substrate shortened to source.

1000

100

Figure 5b: Capacitance (Log Scale)

VDS – Drain-to-Source Voltage (V)

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

200

150

100

VSD – Source-to-Drain Voltage (V)

Figure 7: Reverse Drain-Source Characteristics

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

25˚C

VGS = 0 V

125˚C

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

100

125

150

TJ – Junction Temperature (ºC)

ID = 9 mA

Figure 9: Normalized Threshold Voltage vs. Temperature

VDS – Drain-to-Source Voltage (V)

Figure 5a: Capacitance (Linear Scale)

1200

1000

800

600

400

200

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

ID = 33 A

VDS = 20 V

QG – Gate Charge (nC)

Figure 6: Gate Charge

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

100

125

150

TJ – Junction Temperature (ºC)

ID = 33 A

VGS = 5 V

Figure 8: Normalized On-State Resistance vs. Temperature

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