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TEP0502T5CL Datasheet(PDF) 2 Page - Rectron Semiconductor |
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TEP0502T5CL Datasheet(HTML) 2 Page - Rectron Semiconductor |
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2 / 4 page ![]() Symbol Parameter Value Units PPP Peak Pulse Power (8/20μs) 28 W VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) ±15 ±8 kV TOPT Operating Temperature -55/+150 qC TSTG Storage Temperature -55/+150 qC C) Symbol Parameter Test Condition Min Typ Max Units VRWM Reverse Working Voltage I/O to GND 5.0 V VBR Reverse Breakdown Voltage IT = 1mA Between I/O and GND 5.6 9.4 V IR Reverse Leakage Current VRWM = 5V Between I/O and GND 1 uA VC Clamping Voltage IPP = 1A, tp = 8/20μs Between I/O and GND 10.5 V IPP = 2A, tp = 8/20μs Between I/O and GND 14 V CT Total Capacitance VR = 0V, f = 1MHz Between I/O and GND 3.0 4.0 pF VR = 0V, f = 1MHz Between I/O and I/O 1.5 2.5 pF ABSOLUTE MAXIMUM RATING (Tamb=25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tamb=25°C,unless otherwise specified) |
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