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FOD814 Datasheet(PDF) 4 Page - ON Semiconductor

Part # FOD814
Description  4-Pin DIP Phototransistor Optocouplers
PDF  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FOD814 Datasheet(HTML) 4 Page - ON Semiconductor

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Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
Notes:
2. Current Transfer Ratio (CTR) = IC / IF x 100%.
3. For test circuit setup and waveforms, refer to page 7.
Symbol
Parameter
Device
Test Conditions
Min.
Typ.
Max.
Unit
EMITTER
VF
Forward Voltage
FOD814
IF = ±20 mA
1.2
1.4
V
FOD817
IF = 20 mA
1.2
1.4
IR
Reverse Current
FOD817
VR = 4.0 V
10
µA
Ct
Terminal Capacitance
FOD814
V = 0, f = 1 kHz
50
250
pF
FOD817
V = 0, f = 1 kHz
30
250
DETECTOR
ICEO
Collector Dark Current
FOD814
VCE = 20 V, IF = 0
100
nA
FOD817
VCE = 20 V, IF = 0
100
BVCEO
Collector-Emitter Breakdown
Voltage
FOD814
IC = 0.1 mA, IF = 0
70
V
FOD817
IC = 0.1 mA, IF = 0
70
BVECO
Emitter-Collector Breakdown
Voltage
FOD814
IE = 10 µA, IF = 0
6
V
FOD817
IE = 10 µA, IF = 0
6
Symbol
Parameter
Device
Test Conditions
Min.
Typ.
Max.
Unit
CTR
Current Transfer Ratio(2)
FOD814
IF = ±1 mA, VCE = 5 V
20
300
%
FOD814A
50
150
FOD817
IF = 5 mA, VCE = 5 V
50
600
FOD817A
80
160
FOD817B
130
260
FOD817C
200
400
FOD817D
300
600
VCE(SAT)
Collector-Emitter Saturation
Voltage
FOD814
IF = ±20 mA, IC = 1 mA
0.1
0.2
V
FOD817
IF = 20 mA, IC = 1 mA
0.1
0.2
Symbol
Parameter
Device
Test Conditions
Min.
Typ.
Max.
Unit
fC
Cut-Off Frequency
FOD814
VCE = 5 V, IC = 2 mA,
RL = 100 , -3 dB
15
80
kHz
tr
Response Time (Rise)
FOD814,
FOD817
VCE = 2 V, IC = 2 mA,
RL = 100 
(3)
418
µs
tf
Response Time (Fall)
FOD814,
FOD817
318
µs
www.onsemi.com
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