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BC109 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BC109 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc General Purpose NPN Small Signal Transistor BC109 DESCRIPTION · With TO-18 package. · High DC Current Gain- : hFE:200-800@ (VCE= 5V, IC= 2mA) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to Ambient 500 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 100mA A PT Total Power Dissipation @TA=25℃ 300 mW TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ |
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Similar Description - BC109 |
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