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SS115 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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SS115 Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 3 page ![]() 1/ 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. SURFACE MOUNTSCHOTTKY RECTIFIERS Reverse Voltage - 40V~200V Forward Current - 1.0 A FEATURES Metal silicon junction, majority carrier conduction Heatsink structure Low power loss, high efficiency Super Low VF Schottky barrier diodes For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications LeadfreeincomplywithEURoHS2011/65/EUdirectives MECHANICAL DATA Case:SOD-123(1206) Terminals: Solderable per MIL-STD-750, Method2026 Approx. Weight: 15mg /0.0005oz Pinning 1.Cathode 2.Anode 1 2 SOD-123(1206) Absolute Maximum Ratings and Electrical characteristics Ratings at25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols SS12 SS14 SS16 SS18 SS110 SS115 SS120 Units Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 150 200 V Maximum RMS voltage VRMS 14 28 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 150 200 V Maximum Average Forward Rectified Current IF(AV) 1.0 A Peak Forward Surge Current, 8.3ms Single Half Sine- waveSuperimposed On Rated Load (JEDEC method) IFSM 25 A Maximum Instantaneous Forward Voltageat 1 A VF 0.55 0..65 0.85 0.95 V Maximum Instantaneous Reverse Current TA = 25°C atRated DC Reverse Voltage TA = 100°C IR 0.5 20 0.3 15 mA Typical Junction Capacitance ( 1) Cj 60 40 pF Typical Thermal Resistance ( 2) RθJA 120 °C/W Operating Junction Temperature Range Tj 150 °C Storage Temperature Range Tstg -55 ~ +150 °C (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)P.C.B. mounted with 8 X 8mmcopper pad areas. Marking Code SS12 SK12 SS14 SK14 SS16 SK16 SS18 SK18 SS110 SK110 SS115 SK115 SS120 SK120 SOD123 SS12 THRU SS120 (1206) |
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