STP9NB60 datasheet(1/10 Pages) VBSEMI

Part #	STP9NB60

Description	N-Channel 650V (D-S) Power MOSFET

PDF	10 Pages

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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N-Channel 650V (D-S) Power MOSFET

FEATURES

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

• Avalanche energy rated (UIS)

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25

Ω, IAS = 4.5 A.

c. 1.6 mm from case.

d. ISD

≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

650

RDS(on) max. at 25 °C (

Ω)VGS = 10 V

0.

Qg max. (nC)

43

Qgs (nC)

5

Qgd (nC)

22

Configuration

Single

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

12

A

TC = 100 °C

9.4

Pulsed Drain Current a

IDM

45

Linear Derating Factor

3.6

W/°C

Single Pulse Avalanche Energy b

EAS

mJ

Maximum Power Dissipation

PD

/34

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

15

V/ns

Reverse Diode dV/dt d

4.1

Soldering Recommendations (Peak Temperature) c

for 10 s

300

°C

TO-220AB

Top View

GD S

G D S

TO-220 FULLPAK

Top View

58

D2PAK

(TO-263)

G

D

S

106

290

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

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