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B581XWS Datasheet(PDF) 1 Page - Rectron Semiconductor

Part # B581XWS
Description  Plastic-Encapsulate Schottky Barrier Diode
PDF  5 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

B581XWS Datasheet(HTML) 1 Page - Rectron Semiconductor

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Plastic-Encapsulate Schottky Barrier Diode
Features
High Current Capability
Low Forward Voltage Drop
Mechanical Data
SOD-323
Marking: B5817WS:
SJ
B5818WS:
SK
B5819WS:
SL
SOD-323 Small Outline Plastic Package
Polarity: Color band denotes cathode end
Mounting Position: Any
Maximum Ratings & Thermal Characteristics (Ratings at 25
ambient temperature unless otherwise specified.)
Parameters
Symbol
B5817WS
B5818WS
B5819WS
Unit
Maximum repetitive peak reverse voltage
VRRM
20
30
40
V
Maximum RMS voltage
VRMS
14
21
28
V
Maximum DC blocking voltage
VDC
20
30
40
V
Maximum average forward rectified current
IFM
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave
IFSM
9
A
Typical thermal resistance
RθJA
400
/W
Power Dissipation
PD
250
Operating junction temperature
Tj
125
Storage temperature range
TSTG
-50-+150
Electrical Characteristics
(Ratings at 25
ambient temperature unless otherwise specified).
Parameters
Symbol
Test conditions
B5817WS
B5818WS
B5819WS
Unit
Maximum forward voltage
VF
IF = 1.0A
IF = 3.0A
0.450
0.750
0.550
0.875
0.600
0.900
V
Maximum reverse breakdown voltage
VR
IR=1mA
20
30
40
V
Maximum reverse current
IR
VR=20V
B5817WS
VR=30V
B5818WS
VR=40V
B5819WS
1.0
mA
Type junction capacitance
Cj
VR = 4.0V, f = 1MHz
120
pF
B5817WS
B5818WS
B5819WS
2018-03/11
REV:A
I
2T
A
2S
0.337
Typical Current Squared Time
P/N suffix V means AEC-Q101 qualified, eg.B5817WSV
P/N suffix V means Halogen-free


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