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FODM352V Datasheet(PDF) 2 Page - ON Semiconductor

Part # FODM352V
Description  Photodarlington Optocoupler with a Base-Emitter Resistor in a 4-Pin Full Pitch Mini-Flat Package
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FODM352V Datasheet(HTML) 2 Page - ON Semiconductor

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FODM352
www.onsemi.com
2
Table 1. SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical
insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated
Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/110/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
VPR
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample
Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Produc-
tion Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over−Voltage
6,000
Vpeak
External Creepage
w 5
mm
External Clearance
w 5
mm
DTI
Distance Through Insulation (Insulation Thickness)
w 0.4
mm
TS
Case Temperature (Note 1)
150
°C
IS,INPUT
Input Current (Note 1)
200
mA
PS,OUTPUT
Output Power (Note 1)
300
mW
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
> 109
W
1. Safety limit values – maximum values allowed in the event of a failure.
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 2) TA = 25°C unless otherwise specified.
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
−55 to +150
°C
TOPR
Operating Temperature
−55 to +110
°C
TJ
Junction Temperature
−55 to +125
°C
TSOL
Lead Solder Temperature (Refer to Reflow Temperature Profile)
260 for 10 sec
°C
EMITTER
IF(average)
Continuous Forward Current
50
mA
VR
Reverse Input Voltage
6
V
PDLED
Power Dissipation (Note 3)
70
mW
DETECTOR
IC(average)
Continuous Collector Current
150
mA
VCEO
Collector−Emitter Voltage
300
V
VECO
Emitter−Collector Voltage
0.1
V
PDC
Collector Power Dissipation (Note 3)
150
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.



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