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2SD2000 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD2000 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching s Features q High-speed switching q Satisfactory linearity of foward current transfer ratio hFE q Large collector power dissipation PC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg Ratings 80 60 6 8 4 1 35 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 * hFE2 VBE(sat) VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 4A VCE = 4V, IC = 4A IC = 4A, IB = 0.4A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V min 60 70 20 typ 80 0.3 1.0 0.2 max 100 100 250 2.0 1.5 Unit µA µA V V V MHz µs µs µs *h FE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
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