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ISCN280N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN280N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCN280N DESCRIPTION · Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 8A · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V (Min) · Complement to Type ISCP281N · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Signal transistors for audio amplifiers · Audio market ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Similar Part No. - ISCN280N |
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Similar Description - ISCN280N |
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