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D2137 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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D2137 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page  1 Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Allowing supply with the radial taping s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 6 5 3 15 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD2137 2SD2137A 2SD2137 2SD2137A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICES ICEO IEBO VCEO hFE1 * hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V min 60 80 70 10 typ 30 0.3 2.5 0.2 max 100 100 100 100 100 250 1.8 1.2 Unit µA µA µA V V V MHz µs µs µs 2SD2137 2SD2137A 2SD2137 2SD2137A 2SD2137 2SD2137A *h FE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter MT4 Type Package 1.0 10.0 ±0.2 0.55 ±0.1 2.5 ±0.2 2.5 ±0.2 5.0 ±0.1 2.25 ±0.2 1.2 ±0.1 0.65 ±0.1 0.55 ±0.1 C1.0 90 ° C1.0 123 1.05 ±0.1 0.35 ±0.1 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. |
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