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TSU112IYST Datasheet(PDF) 6 Page - STMicroelectronics |
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TSU112IYST Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 32 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit ICC Supply current (per channel), no load, Vout = VCC/2 T = 25 °C 920 1300 nA -40 °C < T< 125 °C 1650 AC performance GBP Gain bandwidth product RL = 1 MΩ, CL = 60 pF 9 kHz Fu Unity gain frequency 5.5 Φm Phase margin 70 degrees Gm Gain margin 30 dB SRp Slew rate (10 % to 90 %) RL = 1 MΩ, CL = 60 pF, Vout = 0.3 V to (VCC+) - 0.3 V 0.9 1.8 V/ms SRn Slew rate (10 % to 90 %) RL = 1 MΩ, CL = 60 pF, Vout = 0.3 V to (VCC+) - 0.3 V 1.5 3.0 V/ms en Equivalent input noise voltage f = 100 Hz 200 nV/√Hz ʃen Low-frequency, peak-to-peak input noise Bandwidth: f = 0.1 to 10 Hz 4.6 µVpp trec P Overload recovery time (from positive rail) 100 mV from rail in comparator, RL = 100 kΩ, VΙD = ±1 V, -40 °C < T< 125 °C 420 µs trec N Overload recovery time (from negative rail) 100 mV from rail in comparator, RL = 100 kΩ, VΙD = ±1 V, -40 °C < T< 125 °C 880 µs 1. Guaranteed by design Table 5. Electrical characteristics at (VCC+) = 5 V with (VCC-) = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 1 MΩ connected to V CC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage T = 25 °C 150 µV -40 °C < T< 125 °C 400 ΔVio/ΔT Input offset voltage drift -40 °C < T< 125 °C 2.5 μV/°C Iio Input offset current (1) T = 25 °C 1 10 pA -40 °C < T< 125 °C 50 Iib Input bias current (1) T = 25 °C 1 10 -40 °C < T< 125 °C 50 CMR Common mode rejection ratio, 20 log (ΔVicm/ΔVio), Vicm = 0 to 5 V T = 25 °C 85 106 dB -40 °C < T< 125 °C 80 SVR Supply voltage rejection ratio, VCC = 1.5 to 5.5 V, Vicm = 0 V T = 25 °C 89 107 -40 °C < T< 125 °C 84 Avd Large signal voltage gain, Vout = 0.2 V to (VCC+) - 0.2 V RL = 100 kΩ, T = 25 °C 105 132 TSU112IY Electrical characteristics DS13616 - Rev 1 page 6/32 |
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