H11AV1VM datasheet(2/11 Pages) ONSEMI

2 / 11 page

H11AV1M, H11AV1AM

www.onsemi.com

SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical

insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective

circuits.)

Parameter

Characteristics

Installation Classifications per DIN VDE 0110/1.89 Table 1,

For Rated Mains Voltage

<150 VRMS

I–IV

<300 VRMS

I–IV

Climatic Classification

55/100/21

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

175

Symbol

Parameter

Value

Unit

VPR

Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test

with tm = 10 s, Partial Discharge < 5 pC

1360

Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test

with tm = 1 s, Partial Discharge < 5 pC

1594

Vpeak

VIORM

Maximum Working Insulation Voltage

850

Vpeak

VIOTM

Highest Allowable Over−Voltage

6000

Vpeak

External Creepage

≥7

External Clearance

≥7

External Clearance (for Option TV, 0.4” Lead Spacing)

≥10

DTI

Distance Through Insulation (Insulation Thickness)

≥0.5

Case Temperature (Note 1)

175

°C

IS,INPUT

Input Current (Note 1)

350

PS,OUTPUT Output Power (Note 1)

800

RIO

Insulation Resistance at TS, VIO = 500 V (Note 1)

>109

1. Safety limit values – maximum values allowed in the event of a failure.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Max

Unit

TOTAL DEVICE

TSTG

Storage Temperature

−40 to +125

°C

TOPR

Operating Temperature

−40 to +100

°C

Junction Temperature

−40 to +125

°C

TSOL

Lead Solder Temperature

260 for 10 seconds

°C

Total Device Power Dissipation @ TA = 25°C

270

Derate Above 25°C

2.94

mW/°C

EMITTER

DC / Average Forward Input Current

Reverse Input Voltage

LED Power Dissipation @ TA = 25°C

120

Derate Above 25°C

1.41

mW/°C

DETECTOR

VCEO

Collector−to−Emitter Voltage

VCBO

Collector−to−Base Voltage

VECO

Emitter−to−Collector Voltage

Detector Power Dissipation @ TA = 25°C

150

Derate Above 25°C

1.76

mW/°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

H11AV1VM Datasheet(PDF) 2 Page - ON Semiconductor

H11AV1VM Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL