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MMK200S Datasheet(PDF) 2 Page - MacMic |
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MMK200S Datasheet(HTML) 2 Page - MacMic |
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2 / 4 page ![]() 2 Unit V V mΩ V mA mA mA A V Unit V V mΩ °C °C V Nm Nm K /W g Typ. Max. 25 MMK200S ELECTRICAL CHARACTERISTICS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. mA IRRM Maximum Peak Reverse Current VR = VRRM, TJ = 125°C 25 IDRM Maximum Peak Off-State Current VD = VDRM, TJ = 125°C VTM Maximum on state voltage drop ITM=500A,td=10 ms, half sine 1.75 VTO For power loss calculations only TJ = 125°C 0.80 rT 2.0 VGT Max. required DC gate voltage to trigger VA=6V, RA=1Ω,TJ = -40°C 4.0 V VA=6V, RA=1Ω 1.0 2.5 VA=6V, RA=1Ω,TJ = 125°C 1.7 IGT Max. required DC gate current to trigger VA=6V, RA=1Ω,TJ = -40°C 270 mA VA=6V, RA=1Ω 75 150 VA=6V, RA=1Ω,TJ = 125°C 80 VGD Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125°C 0.25 IGD Max. required DC gate current not to trigger,VD = VDRM, TJ = 125°C 6 IH Maximum holding current 100 200 IL Maximum latching current 200 400 PGM Maximum peak gate power 12 W PG(AV) Maximum average gate power 3.0 IGM Maximum peak gate current 3.0 -VGM Maximum peak negative gate voltage 10 dv/dt Critical Rate of Rise of Off-State Voltage,TJ=125°C,exponential to 67% rated VDRM 1000 V/μs di/dt Max.Rate of Rise of Turned on Current, TJ =125°C,ITM=500A, rated VDRM 150 A/μs ELECTRICAL CHARACTERISTICS (Diode) Symbol Parameter/Test Conditions Min. Typ. Max. IRM Maximum Reverse Leakage Current VR = VRRM 0.5 mA VR = VRRM, TJ = 125°C 10 VF Forward Voltage Drop IF=500A 1.5 VTO For power-loss calculations only , TJ = 125°C 0.9 rT 1.0 MODULE CHARACTERISTICS T C =25°C unless otherwise specified TJ Junction Temperature -40 to +125 TSTG Storage Temperature Range -40 to +125 VISO Isolation Breakdown Voltage AC, 50Hz(R.M.S), t=1minute 3000 Torque to heatsink Recommended(M6) 3~5 Torque to terminal Recommended(M6) 3~5 RthJC Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode) 0.12/0.14 Weight 160 |
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