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SD4841 Datasheet(PDF) 3 Page - Silan Microelectronics Joint-stock |
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SD4841 Datasheet(HTML) 3 Page - Silan Microelectronics Joint-stock |
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3 / 11 page ![]() SD4840/4841/4842/4843/4844 HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2008.12.17 Http: //www.silan.com.cn Page 3 of 11 Characteristics Symbol Rating Unit SD4840P67K65 1 SD4841P67K65 1.5 SD4842P67K65 2 SD4843P67K65 3 Continuous Drain Current (Tamb=25 °C) SD4844P67K65 ID 4 A SD4840P67K65 15 SD4841P67K65 30 SD4842P67K65 68 SD4843P67K65 140 Signal Pulse Avalanche Energy(note 2) SD4844P67K65 EAS 200 mJ Power Supply Voltage VCC,MAX 21 V Analog Input Voltage VFB -0.3~ VSD V PD 1.5 W Total Power Dissipation Darting 0.017 W/ °C Operating Junction Temperature TJ +160 °C Operating Temperature Tamb -25~ +85 °C Storage Temperature TSTG -55~+150 °C Note: 1. Pulse width is limited by maximum junction temperature. 2. L=51mH, starting Tj=25 °C ELECTRICAL CHARACTERISTICS (sense MOSFET part, unless otherwise specified, Tamb=25°c) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 μA 650 -- -- V VDS=Max. VGS=0V -- -- 50 μA Zero Gate Voltage Drain Current IDSS VDS=0.8Max. VGS=0V Tamb=125 °C -- -- 200 μA SD4840P67K65 -- 14.0 16.8 SD4841P67K65 -- 8.0 9.6 SD4842P67K65 -- 5.0 6.0 SD4843P67K65 -- 4.0 4.8 Static Drain- Source On Resistance SD4844P67K65 RDS(ON) VGS=10V, ID=0.5A -- 3.0 3.6 Ω SD4840P67K65 -- 210 -- SD4841P67K65 -- 250 -- SD4842P67K65 -- 550 -- SD4843P67K65 -- 640 -- Input Capacitance SD4844P67K65 Ciss VGS=0V, VDS=25V, f=1MHz -- 840 -- pF SD4840P67K65 -- 18 -- SD4841P67K65 -- 25 -- SD4842P67K65 -- 38 -- SD4843P67K65 -- 40 -- Output Capacitance SD4844P67K65 Coss VGS=0V, VDS=25V, f=1MHz -- 44 -- pF |
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