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C3017 Datasheet(PDF) 1 Page - IMP, Inc |
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C3017 Datasheet(HTML) 1 Page - IMP, Inc |
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1 / 2 page  91 © IMP, Inc. Process C3017 CMOS 3 µm 10 Volt Analog Mixed Mode N-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTN 0.6 0.8 1.0 V 100x4 µm Body Factor γ N 0.6 V1/2 100x4 µm Conduction Factor βN 42 47 52 µA/V2 100x100 µm Effective Channel Length LeffN 2.85 3.2 3.55 µm 100x4 µm Width Encroachment ∆WN 0.7 µm Per side Punch Through Voltage BVDSSN 12 V Poly Field Threshold Voltage VTFP(N) 12 V P-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTP –0.6 –0.8 –1.0 V 100x4 µm Body Factor γ P 0.55 V1/2 100x4 µm Conduction Factor βP 13 15 19 µA/V2 100x100 µm Effective Channel Length LeffP 2.85 3.2 3.55 µm 100x4 µm Width Encroachment ∆WP 0.9 µm Per side Punch Through Voltage BVDSSP –12 V Poly Field Threshold Voltage VTFP(P) –12 V Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Well (field) Sheet Resistance ρ P-well(f) 3.2 4.8 6.5 K Ω/ P-well N+ Sheet Resistance ρ N+ 16 21 27 Ω/ N+ Junction Depth xjN+ 0.8 µm P+ Sheet Resistance ρ P+ 50 80 100 Ω/ P+ Junction Depth xjP+ 0.7 µm Gate Oxide Thickness TGOX 44 48 52 nm Interpoly Oxide Thickness TP1P2 60 nm Gate Poly Sheet Resistance ρ POLY1 15 22 30 Ω/ Bottom Poly Sheet Res. ρ POLY2 15 22 30 Ω/ Metal-1 Sheet Resistance ρ M1 50 m Ω/ Metal-2 Sheet Resistance ρ M2 30 m Ω/ Passivation Thickness TPASS 200+900 nm oxide+nit. Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide COX 0.66 0.72 0.78 fF/ µm2 Metal-1 to Poly-1 CM1P 0.0523 fF/ µm2 Metal-1 to Silicon CM1S 0.26 0.30 0.34 fF/ µm2 Metal-2 to Metal-1 CMM 0.033 0.0384 0.041 fF/ µm2 Poly-1 to Poly-2 CP1P2 0.51 0.57 0.63 fF/ µm2 Electrical Characteristics T=25oC Unless otherwise noted ISO 9001 Registered ® |
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