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2SC6043 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC6043
Description  NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6043 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC6043
No.8326-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=50mA
150
300
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=50mA
0.94
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
80
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
80
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
35
ns
Storage Time
tstg
See specified Test Circuit.
330
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7520-002
12 3
0.5
0.5
0.5
0.6
1.45
1.45
6.0
4.7
5.0
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
VR
VCC=25V
IC=10IB1= --10IB2=700mA
VBE= --5V
+
+
50
Ω
RL
INPUT
OUTPUT
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
RB
IC -- VCE
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
IT09719
0
0.2
0.4
0.6
0.8
1.0
1.2
IT09720
0
0.8
1.2
1.4
1.6
1.8
2.0
0.4
0.6
1.0
0.2
0
0.8
0.6
0.4
0.2
1.0
1.2
1.4
1.6
2.0
1.8
0
0.8
0.6
0.4
0.2
1.0
1.2
1.4
1.6
2.0
1.8
VCE=2V
IB=0mA
1mA
2mA
3mA
5mA
10mA
15mA
20mA
25mA
30mA



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