2SD2575 datasheet(1/2 Pages) PANASONIC

Part #	2SD2575

Description	Silicon NPN epitaxial planer type(For low-frequency power amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Transistor

2SD2575

Silicon NPN epitaxial planer type

For low-frequency power amplification

s Features

q

Low collector to emitter saturation voltage VCE(sat).

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

*1

IC

PC

Tj

Tstg

Ratings

15

10

9

5

750

150

–55 ~ +150

Unit

V

A

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

ICEO

IEBO

VCEO

VEBO

hFE1

hFE2

VCE(sat)

fT

Cob

Conditions

VCB = 10V, IE = 0

VCE = 5V, IB = 0

VEB = 5V, IC = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCE = 2V, IC = 0.5A

*

VCE = 2V, IC = 2A

*

IC = 3A, IB = 0.1A

*

VCB = 6V, IE = –50mA, f = 200MHz

VCB = 20V, IE = 0, f = 1MHz

min

10

700

195

typ

0.28

170

45

max

0.1

1.0

0.1

0.5

65

Unit

µA

V

MHz

pF

*1 Measuring time: t = 380

µsec

* Pulse measurement

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