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Document Number 81570

Rev. 1.3, 08-Mar-05

BPW20RF

Vishay Semiconductors

Electrical Characteristics

Optical Characteristics

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward Voltage

1.0

1.3

V

Breakdown Voltage

10

V

Reverse Dark Current

230

nA

Diode capacitance

1.2

nF

400

pF

Dark Resistance

38

G

Ω

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Open Circuit Voltage

330

500

mV

- 2

mV/K

Short Circuit Current

20

60

µA

0.1

%/K

Reverse Light Current

20

60

µA

λ = 950 nm,

42

µA

Angle of Half Sensitivity

ϕ

± 50

deg

Wavelength of Peak Sensitivity

λ

p

920

nm

Range of Spectral Bandwidth

λ

0.5

550 to

1040

nm

Rise Time

3.4

µs

Fall Time

3.7

µs

Figure 1. Reverse Dark Current vs. Ambient Temperature

40

60

80

120

100

20

94 8468

Figure 2. Relative Reverse Light Current vs. Ambient Temperature

0.8

0.9

1.0

1.1

1.3

1.2

94 8469

λ = 950 nm

40

60

80

120

100

20

0