| Electronic Components Datasheet Search |
|
MIC2103 Datasheet(PDF) 25 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
MIC2103 Datasheet(HTML) 25 Page - Microchip Technology |
|
25 / 42 page ![]() 2017 Microchip Technology Inc. DS20005899A-page 25 MIC2103/4 the gate voltage with minimal droop for the power stroke (high-side switching) cycle, i.e., ∆BST = 10 mA x 3.33 μs/0.1 μF = 333 mV. When the low-side MOSFET is turned back on, CBST is recharged through D1. A small resistor RG, which is in series with CBST, can be used to slow down the turn-on time of the high-side N-channel MOSFET. The drive voltage is derived from the VDD supply voltage. The nominal low-side gate drive voltage is VDD and the nominal high-side gate drive voltage is approximately VDD – VDIODE, where VDIODE is the voltage drop across D1. An approximate 30 ns delay between the high-side and low-side driver transitions is used to prevent current from simultaneously flowing unimpeded through both MOSFETs. |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |