UT6JB5 datasheet(2/14 Pages) ROHM

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UT6JB5

Datasheet

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - ambient

RthJA*3

62.5

℃/W

lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = -1mA

-40

Breakdown voltage

temperature coefficient

ΔV(BR)DSS ID = -1mA

-22

mV/℃

ΔTj

referenced to 25℃

Zero gate voltage

drain current

IDSS

VDS = -40V, VGS = 0V

-1

μA

Gate - Source

leakage current

IGSS

VDS = 0V, VGS = ±20V

±100

Gate threshold

voltage

VGS(th)

VDS = VGS, ID = -1mA

-1.0

-2.5

Gate threshold voltage

temperature coefficient

ΔV

GS(th)

ID = -1mA

3.7

mV/℃

ΔTj

referenced to 25℃

Static drain - source

on - state resistance

RDS(on)*4

VGS = -10V, ID = -3.5A

122

mΩ

VGS = -4.5V, ID = -3.5A

121

155

Gate resistance

f=1MHz, open drain

Forward Transfer

Admittance

|Yfs|*4

VDS = -5V, ID = -3.5A

2.6

*1 Pw ≤ 10μs, Duty cycle ≤ 1%

*2 L ⋍ 0.1mH, VDD = -20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2

*3 Mounted on a Cu board (40×40×0.8mm)

*4 Pulsed

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20201028 - Rev.002

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